
The power delivery of this Furukawa laser ranges from 0W to 400mW with a wavelength of 1480 nm and a beam diameter of 10 microns. This IR diode laser has a Gaussian profile and has been used in combination with the Micro Laser Assisted Machining (µ-LAM) set-up1 to determine the effect of temperature and pressure in the µ-LAM process of several semiconductor materials, such as Silicon (Si) and Silicon Carbide (SiC)1.